Decapsulation Of Integrated Circuits

Anatech recommends its FA-2000 reactive ion etcher for decapsulation and depassivation of packaged devices. A typical method of decapsulation is use of fuming nitric or sulfuric acid. Acid decapsulation systems can do an acceptable job for some devices, however, disadvantages include exposure of personnel to acid handling, high cost of ownership and acid disposal, corrosive residue on devices, and over-etching with no ease of end point detection. The FA-2000 is a new solution for decapsulation without the shortcomings of acid systems.

Check out these decapsulated samples !!!

New device technologies include metallization in integrated circuits and organic substrates in packaging. The FA-2000 is a new solution for decapsulation of these special devices.

Tiny 2mm microwave devices…

A disadvantage of plasma decapsulation technology has been slow removal of epoxy and plastic molding materials. The cause of this problem is the build up of filler materials, such as silicon dioxide and quartz based fillers, which do not etch as quickly as organic components in the molding material. The result, if process is not interrupted with tedious manual brushing, is failure to decapsulate the device. An abandoned solution was the use of N2 gas to "blow" away the filler buildup. New molding materials in advanced packages and the use of hard epoxies made this approach ineffective. Process times with previous systems could take more than 48 hours !!!

Ball Grid Arrays complete with second bonds and more.

Anatech’s Fillerblast ™ is the solution. Use of CO2 instead of N2 significantly enhances removal of fillers. A special manifold forms dry ice, which acts as a fine abrasive that is very effective in removing filler buildup. The plasma maintains a constant etch rate, which makes for a much more efficient removal of the molding material. The FA-2000 Fillerblast system also allows for an automatic change over to less aggressive CO2 blasts, or even extra gentle N2 blasts, to help preserve wire bonding. With the FA2000 etch rates for many compounds are more than 1 mil per hour.

Deprocess Flip chip !!!!!

After decapsulation of the device, the FA-2000 can also remove passivation or interdielectric layers. Anisotropic etching delivers aspect ratios needed to preserve functionality and operating condition of the device being treated. The system is capable of using any non corrosive gas and uses mass flow controllers tied into our versatile controller for easy, precise, gas mixing. Precise gas mixing is important to etch selectivity. FA-2000 systems can process wafers as large as 200 mm.

Second bonds preserved with long wires…